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Graphene Conversion
Carrier density, Fermi energy, and Gate voltages
Electronic Properties
Carrier Density (n)
cm-2
m-2
Fermi Energy (EF)
meV
eV
J
Fermi Wavenumber
mm-1
cm-1
m-1
Gate Voltages
Gate Voltage (SiO₂)
mV
V
Thickness:
nm
μm
Gate Voltage (hBN)
mV
V
Thickness:
nm
μm
Constants used: vF = 10⁶ m/s, εr(SiO₂) = 3.9, εr(hBN) = 3.0